EGP10BZ [BL Galaxy Electrical]
HIGH EFFICIENCY RECTIFIER; 高效率整流
| 型号： | EGP10BZ |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | HIGH EFFICIENCY RECTIFIER |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
EGP10A(Z) --- EGP10G(Z)
BL
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
Diffused junction
DO - 41
Low leakage
Low forward voltage
High current capability
Easilycleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
EGP
10A
EGP
10B
EGP
10F
EGP
10G
EGP
10C
EGP
10D
UNITS
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
300
210
300
400
280
400
150
105
150
200
140
200
V
V
V
VRRM
VRMS
VDC
MaximumDC blocking voltage
100
Maximumaverage forw ard rectified current
1.0
A
IF(AV)
9.5mmlead length
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
30.0
A
IFSM
@TJ=125
Maximum instantaneous forw ard voltage
@ 1.0 A
0.95
22
1.25
15
VF
IR
V
A
Maximumreverse current
@TA=25
5.0
at rated DC blocking voltage @TA=125
Maximumreverse recovery time (Note1)
100.0
50
ns
trr
CJ
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
pF
50
RθJA
TJ
/ W
Operating junction temperature range
- 55 ---- + 150
- 55 ---- + 150
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied reverse uoltage of 4.0V DC.
3.Thermal resistance from junction to ambient.
BLGALAXY ELECTRICAL
1.
Document Number 0262008
RATINGS AND CHARACTERISTIC CURVES
EGP10A (Z)---EGP10G(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t r r
50
10
N 1.
N 1.
+0.5A
D.U.T.
(+)
0
PULSE
GENERATOR
(NOTE2)
(+)
-0.25A
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
(-)
NONIN-
DUCTIVE
-1.0A
1 c m
NOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω.
SET TIMEBASEFOR 20/30 ns/cm
FIG.4--TYPICAL REVERSE CHARACTERISTICS
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
Single Phase
Half Wave 60Hz
Resistive or
TJ=25
Inductive Load
Pulse Width=300µS
1.0
0.5
50\100\150\200V
300\400V
0.1
0.04
0.375"(9.5mm)LEAD LENGTH
0
0
25
50 75
100 125
150
175
0.01
0
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
FIG.6--FORWARD DERATING CURVE
35
30
30
25
TJ=25
TJ=125
8.3ms Single Half
25
Sine-W ave
20
15
20
15
10
5
EGP10A-EGP10G
10
5
EGP10A-EGP10D
EGP10F&EGP10G
0
0
0.1
1
4
10
100
10
1
100
REVERSE VOLTAGE,VOLTS
AMBIENT TEMPERATURE,
www.galaxycn.com
BLGALAXY ELECTRICAL
2.
Document Number 0262008
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